june 2009 FDB029N06 n-channel powertrench ? mosfet ?2009 fairchild semiconductor corporation FDB029N06 rev. a www.fairchildsemi.com 1 FDB029N06 n-channel powertrench ? mosfet 60v, 193a, 3.1m w features ? r ds(on) = 2.4m w ( typ.)@ v gs = 10v, i d = 75a ? fast switching speed ? low gate charge ? high performance trench technology for extremely lo w r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild se micon- ductors advanced powertrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc convertors / synchronous rectification d g s d 2 -pak fdb series g s d mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 60 v v gss gate to source voltage 20 v i d drain current -continuous (t c = 25 o c, silicon limited) 193* a -continuous (t c = 100 o c, silicon limited) 136* -continuous (t c = 25 o c, package limited) 120 i dm drain current - pulsed (note 1) 772 a e as single pulsed avalanche energy (note 2) 1434 mj dv/dt peak diode recovery dv/dt (note 3) 6 v/ns p d power dissipation (t c = 25 o c) 231 w - derate above 25 o c 1.54 w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter ratings units r q jc thermal resistance, junction to case 0.65 o c/w r q ja thermal resistance, junction to ambient 62.5 *calculated continuous current based on maximum all owable junction temperature. package limitation cur rent is 120a.
FDB029N06 n-channel powertrench ? mosfet FDB029N06 rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quanti ty FDB029N06 FDB029N06 d2-pak 330mm 24mm 800 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 m a, v gs = 0v, t c = 25 o c 60 - - v d bv dss d t j breakdown voltage temperature coefficient i d = 1ma, referenced to 25 o c - 0.05 - v/ o c i dss zero gate voltage drain current v ds = 48v, v gs = 0v - - 1 m a v ds = 48v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 m a 2.5 3.5 4.5 v r ds(on) static drain to source on resistance v gs = 10v, i d = 75a - 2.4 3.1 m w g fs forward transconductance v ds = 10v, i d = 75a (note 4) - 154 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 7380 9815 pf c oss output capacitance - 1095 1455 pf c rss reverse transfer capacitance - 415 625 pf q g(tot) total gate charge at 10v v ds = 48v, i d = 75a v gs = 10v (note 4, 5) - 116 151 nc q gs gate to source gate charge - 40 - nc q gd gate to drain miller charge - 35 - nc t d(on) turn-on delay time v dd = 30v, i d = 75a v gs = 10v, r gen = 4.7 w (note 4, 5) - 39 87 ns t r turn-on rise time - 178 366 ns t d(off) turn-off delay time - 54 118 ns t f turn-off fall time - 33 76 ns i s maximum continuous drain to source diode forward cur rent - - 193 a i sm maximum pulsed drain to source diode forward current - - 772 a v sd drain to source diode forward voltage v gs = 0v, i sd = 75a - - 1.3 v t rr reverse recovery time v gs = 0v, i sd = 75a di f /dt = 100a/ m s (note 4) - 46 - ns q rr reverse recovery charge - 50 - nc notes: 1. repetitive rating: pulse width limited by maximu m junction temperature 2. l = 0.51mh, i as = 75a, v dd = 50v, r g = 25 w , starting t j = 25 c 3. i sd 75a, di/dt 450a/ m s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 m s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
FDB029N06 n-channel powertrench ? mosfet FDB029N06 rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2 4 6 8 1 10 100 400 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 m mm m s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 5 10 100 700 *notes: 1. 250 m mm m s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v i d , drain current[a] v ds , drain-source voltage[v] 0 70 140 210 280 350 2.0 2.5 3.0 3.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ w ww w ] , drain-source on-resistance i d , drain current [a] 0.0 0.5 1.0 1.5 1 10 100 400 *notes: 1. v gs = 0v 2. 250 m mm m s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 20 40 60 80 100 120 0 2 4 6 8 10 *note: i d = 75a v ds = 15v v ds = 30v v ds = 48v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 30 0 3000 6000 9000 12000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDB029N06 n-channel powertrench ? mosfet FDB029N06 rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 10ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.5 1.0 1.5 2.0 *notes: 1. v gs = 10v 2. i d = 75a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 0.1 1 10 100 300 0.1 1 10 100 1000 10000 100ms 100 m mm m s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 25 50 75 100 125 150 175 0 50 100 150 200 limited by package i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z q qq q jc (t) = 0.65 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z q qq q jc (t) 0.5 single pulse thermal response [ z q qq q jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDB029N06 n-channel powertrench ? mosfet FDB029N06 rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
FDB029N06 n-channel powertrench ? mosfet FDB029N06 rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms d u t v d s + _ d r i v e r r g s a m e t y p e a s d u t v g s ? d v / d t c o n t r o l l e d b y r g ? i s d c o n t r o l l e d b y p u l s e p e r i o d v d d l i s d 1 0 v v g s ( d r i v e r ) i s d ( d u t ) v d s ( d u t ) v d d b o d y d i o d e f o r w a r d v o l t a g e d r o p v s d i f m , b o d y d i o d e f o r w a r d c u r r e n t b o d y d i o d e r e v e r s e c u r r e n t i r m b o d y d i o d e r e c o v e r y d v / d t d i / d t d = g a t e p u l s e w i d t h g a t e p u l s e p e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - - d u t v d s + _ d r i v e r r g s a m e t y p e a s d u t v g s ? d v / d t c o n t r o l l e d b y r g ? i s d c o n t r o l l e d b y p u l s e p e r i o d v d d l l i s d 1 0 v v g s ( d r i v e r ) i s d ( d u t ) v d s ( d u t ) v d d b o d y d i o d e f o r w a r d v o l t a g e d r o p v s d i f m , b o d y d i o d e f o r w a r d c u r r e n t b o d y d i o d e r e v e r s e c u r r e n t i r m b o d y d i o d e r e c o v e r y d v / d t d i / d t d = g a t e p u l s e w i d t h g a t e p u l s e p e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - - d = g a t e p u l s e w i d t h g a t e p u l s e p e r i o d - - - - - - - - - - - - - - - - - - - - - - - - - -
FDB029N06 n-channel powertrench ? mosfet FDB029N06 rev. a www.fairchildsemi.com 7 mechanical dimensions d 2 pak d 2 pak dimensions in millimeters
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